Transforming Industries with AI & Semiconductor

The process begins with the design of the GaN epitaxial structure engineered on a high-performance substrate such as Silicon Carbide (SiC). Multiple layers—including GaN cap, AlGaN barrier, GaN buffer, and AlN nucleation—are optimized to ensure superior thermal conductivity, high electron mobility, and reliability required for high-power RF applications.

Once the epi structure is finalized, the wafer undergoes semiconductor processing steps like photolithography, etching, metallization, and passivation. This transforms the wafer into functional GaN device layers ready for IC fabrication. The processed wafer contains multiple devices distributed across the substrate.

The processed wafer is diced, and individual GaN die are fabricated into integrated circuits. These ICs incorporate RF amplifier structures designed to handle high power and wide-band operation. The layout includes matching networks and metallization structures required for optimal RF performance.

The fabricated ICs are then packaged into protective high-reliability RF packages. Packaging improves mechanical strength, thermal handling, and electrical interfacing. It enables the device to be integrated into RF modules and systems while maintaining low parasitics and stable high-frequency performance.

The packaged GaN device is integrated into a fully assembled RF power amplifier module. The module delivers:

• 150 W continuous-wave output power
• Operating range: 700 MHz – 6 GHz
• Compact size: 32 × 20 × 5 cm

This module is ready for deployment in applications such as radar, satellite communication, defense electronics, 5G infrastructure, and research systems.

Product Overview

A series is SEMISHARE years carefully developed a production automatic high and low temperature probe, the probe station has high test precision and super fast test speed, with automatic up-down material, automatic wafer alignment, automatic wafer center, automatic test diesize, etc, has the identification function of wafer ID at the same time, can be a single point test can also be continuous testing, test software feature-rich, heavily for the enterprise to gain test speed, greatly improving the productivity and efficiency.

Basic Information

Application direction

Wafer testing of various kinds of devices Wafer and other Wafer performed RF testing and other characteristics analysis of I-V C-V optical signal RF 1/ F noise, etc.

Technical characteristics

A8 Full Automatic Prober

High precision and test speed, greatly improving test efficiency
Micron-scale fully closed-loop motion control
High voltage and high current test application
Bernoulli arm support sheet
Small size, light weight, smaller footprint
24X7 hours on-chip detection

A12 Full Automatic Prober

Super high test precision and test speed, greatly improve productivity benefits
Fully automated system running, fast safe and reliable test
Support single point testing and continuous testing
Integrated control system, fast access to instrument testing
XY maximum speed (screw structure): 250mm/s; XY maximum speed (linear motor): 500mm/s
Index time (screw structure): 280ms(10mm Die size, 200μm separation height); Index time (linear motor): 200ms(5mm Die size, 300μm separation height)
Rich software automation test, precise mechanical precision calibration
Automatic wafer thickness measurement and ID reading card can be upgraded
Leading internal anti - shock system device, more stable operation

Product Overview

X series is an integrated and highly efficient semi-automatic wafer probe platform that is specialized in testing the performance of various advanced chips. It integrates various functions such as electric light wave and microwave, etc. It has the highest temperature width and test accuracy in the industry at present, and can match various test application environments, providing reliability wafer testing within -60 ~300 wide temperature range.

Basic Information

Application direction

Equipment professional deal with 12 "8" 6 "wafer Si/GaN/SiC and other kinds of devices of advanced chip performance test, can be equipped with corresponding instruments and meters, for the I - V C - V light RF signal character such as 1 / f noise analysis, feature-rich devices, scalable high-power wafer test RF test automatic test, and can load temperature control system, satisfy the customer in the high and low temperature environment of all kinds of wafer device performance test requirements.

Technical characteristics

The industry's most efficient CHUCK system, test efficiency increased by more than 40%
The industry's most efficient CHUCK test system running speed >70mm/s, motion precision 1 m, while moving the translocation time index time 500ms, excellent system operating parameters have reached the highest level of the industry, ultra-high test accuracy and efficiency to meet all kinds of wafers and devices of high repeatability and stability test, compared with other probe brands in the industry, the test efficiency is effectively increased by more than 40%. -60 ~300 is the highest temperature wide area in the industry, with temperature control accuracy and stability better than 0.08, providing reliability wafer testing in high and low temperature environments. The compact structure design of four-dimensional motion with low center of gravity ensures the motion speed of 70mm/s while maintaining the stability of motion acceleration and deceleration.

Industry leading 3 times imaging technology
Built-in SEMISHARE patent more than three zoom microscope view three times with JiaoGuang road system, 120 x 2000 x variable times optical amplifier, size view shows at the same time, more can make the point needle and convenient operation, double Basler 2 million pixels high speed CCD 23 "display and Mituyoyo high precision high resolution camera, precision positioning of high stability high definition, image output and high precision measurement and dynamic monitoring.

Auxiliary CHUCK module silicon wafer safe upper and lower
The unique Chuck XY axis design in the industry has changed the common phenomenon that the probe system of other brands in the market is affected by the resistance of laminated plates in different directions and sizes, leading to the decline of motion stability.This ensures that the XY axis is not affected by the laminate when moving, making the motion precision and stability higher. Compared with other brands in the industry, the probe table cavity of SEMISHARE can be opened once and pulled out the entire Chuck mechanism to load and load silicon wafers at a speed of 370mm with a long stroke. The manual feeding of the Wafer is more convenient and faster.Meanwhile, the Chuck's rotation Angle range is larger, which requires lower demand for manual laying wafer, and the operation is more flexible and convenient.

Design of O-type needle seat platform
The probe testing system adopts the O-type needle seat platform design, which makes the most efficient use of the space of the needle seat, up to 12 needle seats can be placed at the same time. Compared with other probe brands in the market, the number of the needle seat is increased by 50%, effectively realizing more efficient and rapid testing.

Air film shock absorption system
The industry's unique internal integration of high-performance air film shock absorption system and the dual design of the external isolation barrier, effectively avoid the vibration caused by the operator's touch;In addition, a long-aging casting is used as the substrate to suppress the vibration in the process of motion at the fastest speed of 1S in the industry to ensure the stable operation of the equipment, and to ensure that the screen does not shake when the image is enlarged at 2000X;At the same time, the high-precision control valve ensures that the height error of the moving part of the platform is 0.1mm, effectively realizing the test ability of fast DIE to die, ensuring that the whole system can still maintain a stable running state when moving at a high speed, and greatly improving the test efficiency.

Anti-interference shielding system
Anti interference EMI/Spectral noise/external light closed shielding cavity, cavity with the surface of conductive oxide and nickel plating process, to ensure the conduction state between the parts so as to achieve the shielding effect, reduce the system noise, blocking interference effectively, and provide low leakage current protection, provides the best test environment for the weak electric signal test;At the same time, the closed chamber in the low temperature environment to avoid the test sample condensation, to ensure the wafer and device under the high and low temperature environment fast and safe reliability test.

Independent research and development of software integration system, more compatibility
Support semi-automatic control (manual test or automatic test). Automatic Wafer calibration automatic Wafer mapping automatic die size measurement automatic align automatic test data can be accessed remotely. Automatic calibration of RF probe module with one key, automatic needle clearing function. One-key adaptive four-axis Chuck precision calibration, supporting micron pad point measurement. Single point or continuous testing can be supported. Strong data storage capacity and data processing capacity. The bin value can be divided to determine the device NG. Multi-system integration to upgrade the operating system application system and device test system independently. Intuitive and simple operation design, quick and easy operation, effective saving operation training time.

Flexible optional configuration and extension
Convenient instrument access and support system automatic expansion and upgrade, temperature control system loading;There are also a variety of test modules available. According to the test module, it can be used together with a variety of positioner fixtures, needle CARDS and probe tables, such as six-axis positioner RF cables.Many system operating parameters and features reach the highest level of the industry, can meet your different test needs, but also an ideal choice for more industry customers a semi-automatic probe table equipment.

1 ) 18-40GHz conical horn antenna for various communication systems with horizontal and vertical dual-line polarization

Product Description

18-40GHz conical horn antenna for various communication systems with horizontal and vertical dual-line polarization

Product Description

This SH-AnT-1840 antenna features a conical horn design and supports a frequency range from 18GHz to 40GHz. It provides horizontal and vertical dual-line polarization, ensuring versatile performance. The antenna’s main flap width ranges from 10° to 40°, with side-valve rejection of 15 dB in the E-plane and 23 dB in the H-plane, ensuring excellent signal quality and reduced interference. The gain ranges from 14 to 20 dB, and the isolation between both ports is no less than 20 dB, offering superior performance in high-frequency applications. The antenna has an SMA-K interface and is lightweight, weighing less than 0.07kg. Its compact mouth size is less than 34mm, making it suitable for various communication systems. The surface is treated with conductive oxidation for improved durability, and it can withstand power up to 800W. The antenna is designed to operate in a wide temperature range from -40°C to 70°C, with a storage temperature range from -55°C to 80°C

Model	SH-AnT-1840	Interface form	SMA-K
Antenna form	conical horn	Mouth size	≤34mm
Frequency Range	18GHz-40GHz	Weight	≤0.07kg
Standing wave	not greater than 2.5	Surface treatment	conductive oxidation
Polarization	Horizontal and vertical double line polarisation	Operating temperature	-40°C～70°C
Gain	14 to 20 dB	Storage temperature	-55°C～80°C

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2 ) SWT-AnT-0506 High Gain 5-6GHz Horn Antenna for Independent Base Stations

Product Description

1. Product technical indicators 1) Model: SWT-AnT-0506 2) Frequency range: 5GHz to 6GHz 3) Standing wave: no more than 1.5 4) Polarization: Linear Polarization 5) Beam width: 30 。-45 ° 6) Gain: ≥12dB@5-6GHz 7) Power: 100W 8) Outer dimensions138.27x168.38mm 9) Basic material: Aluminum

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3 ) High-Gain 17.6-26.5GHz Horn Antenna for Radar & Communication System

Product Description

1.0 Electrical parameters: 1.1 frequency range 17.6-26.5 GHz 1.2 Standing wave (Max. VSWR) ≤1.5 1.3 Antenna Gain (TYP) 10 dB 1.4 Polarization mode linear polarization 2.0 Mechanical parameters: 2.1 Outer contour dimensions (length x width x height) About 12*16*45mm 2.2 Paint the exterior surface Sea grey 2.3 basic materials aluminium product 2.4 weight make an appointment: 3.0 Product profile

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4 ) Wideband High-Gain Horn Antenna for Robust RF Performance in Demanding Operational Environments

Product Description

Model	SH-AnJ-0208
Antenna form	Pyramid Horn
Frequency Range	2GHz~8GHz
Standing wave	≤2.0
Polarization	Single linear polarization
Beam width	≥45°
Gain	8～12dB
Interface form	SMA-50K
Oral size	138.27x168.38mm
Weight	≤1.2kg
Surface treatment	Conductive oxidation
Operating temperature	-40~70℃
Storage temperature	-55~80℃

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5 ) Professional Horn Antenna - 25dB Gain, VSWR ≤1.5, 2.92-K Coaxial Interface, Copper Material with Pickling Passivation & Black Lacquer

Product Description

Model: SWT-LB220D25CZYP VSWR: ≤1.5 Gain: 25dB Coaxial Interface: 2.92-K Material: copper Surface treatment: pickling passivation Coating: black lacquer Interface Form: 25 dB

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6 ) RF Microwave 8-23 GHz Horizontal and Vertical Dual Linear Polarization Antenna

Product Description

RF Microwave 8-23 GHz Horizontal and Vertical Dual Linear Polarization Antenna

Product Description

The 8-23 GHz dual linear polarization antenna is a type of antenna designed to operate within the frequency range of 8 GHz to 23 GHz. It features dual linear polarization, allowing it to simultaneously transmit and receive electromagnetic waves in two orthogonal directions. This antenna is commonly used in high-frequency communication systems such as radar, satellite communications, radio links, and communication networks. Frequency Range: Operates within the range of 8 GHz to 23 GHz, covering various communication and radar application bands. Dual Linear Polarization: Capable of independent polarization in vertical and horizontal directions, providing flexibility in signal transmission and reception. Radiation Characteristics: Exhibits good radiation characteristics such as radiation power, radiation pattern, beamwidth, etc., which can be designed and optimized based on specific requirements. Antenna Gain: Typically offers high antenna gain, enhancing signal transmission distance and coverage. Interference Resistance: Dual linear polarization design improves the antenna's resistance to environmental and channel interference, enhancing the reliability and stability of communication systems. Antenna Structure: May employ complex antenna structures such as dipole antennas, waveguide antennas, or compensating antennas to achieve desired performance metrics and operational requirements. Application Areas: Widely used in military communications, satellite communications, radar systems, radio links, and mobile communications, playing a crucial role in the transmission and reception of high-frequency signals. Performance Optimization: Design and optimization processes may consider parameters such as bandwidth, resonance frequency, impedance matching, beamwidth, cross-polarization, etc., to achieve optimal performance and efficiency. Understanding these aspects provides insight into the role and advantages of the 8-23 GHz dual linear polarization antenna in communication systems, as well as its specific application methods and performance requirements in different scenarios.

Specification

Model	SH-AnT-0823	Interface form	SMA-50K
Antenna form	Cone horn	Oral size	≤77mm
Frequency Range	8GHz-23GHz	Weight	≤0.5kg
Standing wave	no more than 2	Surface treatment	Conductive oxida
Polarization	Horizontal and vertical dual linear polarization 10-40°	Operating temperature	-40°C～70°C
Gain	＞20dB	Storage temperature	-55°C～80°C

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7 ) Full Range Wr3~Wr42 18-325 GHz Waveguide Horn Antenna For wireless networks

Product Description

1. Full Range Wr3~Wr42 18-325 GHz Wideband Wireless Antennas Waveguide Horn Antenna For wireless networks

Description

Rectangular horns are one of our most popular antennas. Each horn is precisely electrocast and gold-plated on the mandrel. These horns have maximum return loss and the gain from 22 to 24dB. Special orders can be made for horns with different gains, Dimension of this antenna is from WR3 to WR42. The rectangular waveguide horn antenna with a gain ranging from 22 dB to 24 dB, operating in the frequency range of 18 GHz to 325 GHz, is a type of antenna designed for microwave and millimeter-wave applications. This antenna is commonly used in radar systems, communication systems, wireless networks, as well as in astronomy and remote sensing applications. Here is a specific introduction to this antenna: 1. Frequency Range: Suitable for microwave and millimeter-wave frequencies ranging from 18 GHz to 325 GHz, covering a wide range of applications. 2. Gain: Typically offers a gain of 22 dB to 24 dB, enhancing signal reception and transmission efficiency. 3. Waveguide Structure: Utilizes a rectangular waveguide structure, providing excellent waveguide characteristics and low transmission losses. 4. Horn Design: Incorporates a horn-shaped design, allowing for a wide beamwidth and excellent radiation characteristics, suitable for long-distance and wide-area communication needs. 5. Materials and Manufacturing: Usually constructed from metal materials such as aluminum, brass, or copper, offering durability and stability. 6. Application Areas: Widely used in antenna arrays for radar systems, transceivers in communication systems, remote sensing, and astronomical observations. 7. Performance Features: Offers high gain, low losses, excellent radiation characteristics, and interference resistance, suitable for complex communication environments and demanding applications. 8. Installation and Adjustment: Relatively straightforward to install and adjust, allowing for customization and optimization based on specific requirements. Understanding these details provides insights into the role and advantages of the rectangular waveguide horn antenna operating in the 18 GHz to 325 GHz frequency range with gains of 22 dB to 24 dB in microwave and millimeter-wave communication systems, as well as its specific application methods and performance requirements in various scenarios.

Part Name	WR	Frequency (GHz)	VSWR	WG A DIM	WG B DIM	Height-H	Length-L	Width-W	Flange
SWT42S	42	18 - 26.5	1.1:1	0.42 in	0.17 in	3.064 in	7.48 in	4.068 in	S 0.875
SWT42S	28	26.5 - 40	1.1:1	0.28 in	0.14 in	2.069 in	5.0 in	2.712 in	S 0.750
SWT22R	22	33 - 50	1.1:1	0.224 in	0.112 in	1.656 in	4.07 in	2.17 in	R 1.125
SWT19R	19	40 - 60	1.1:1	0.188 in	0.094 in	1.39 in	3.48 in	1.821 in	R 1.125
SWT15R	15	50 - 75	1.1:1	0.148 in	0.074 in	1.094 in	2.78 in	1.434 in	R 0.750
SWT12R	12	60 - 90	1.1:1	0.122 in	0.061 in	0.902 in	2.35 in	1.182 in	R 0.750
SWT10R	10	75 - 110	1.1:1	0.10 in	0.05 in	0.74 in	1.94 in	0.969 in	R 0.750
SWT8R	8	90 - 140	1.1:1	0.08 in	0.04 in	0.591 in	1.56 in	0.775 in	R 0.750
SWT6R	6	110 - 175	1.1:1	0.065 in	0.0325 in	0.481 in	1.26 in	0.63 in	R 0.750
SWT5R	5	140 - 220	1.1:1	0.051 in	0.0255 in	0.377 in	1.04 in	0.494 in	R 0.750
SWT4R	4	170 - 260	1.1:1	0.043 in	0.0215 in	0.318 in	0.86 in	0.417 in	R 0.750
SWT3R	3	220 - 325	1.1:1	0.034 in	0.017 in	0.251 in	0.71 in	0.329 in	R 0.750

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8 ) 1~18 GHz 800 W digital satellite TV RF module satellite receiver conical horn antenna

Product Description

1~18 GHz 800 W digital satellite TV RF module satellite receiver conical horn antenna

A conical horn antenna is a type of antenna commonly used in microwave and radio frequency (RF) applications. Here's an overview:

1.Structure: It consists of a flared, conical-shaped horn that gradually expands from a narrow opening to a wider aperture. The horn may have a smooth or corrugated inner surface, depending on design requirements.

2.Functionality: Radiation Pattern: The conical horn antenna is known for its directional radiation pattern, with a well-defined beamwidth and gain. Frequency Range: It can operate over a wide frequency range, typically in the microwave or RF spectrum. Impedance Matching: Properly designed horns offer good impedance matching to the transmission line or feed system, minimizing signal reflections. Polarization: Depending on the design, conical horn antennas can support linear or circular polarization.

3.Applications: Communication Systems: Used in satellite communication, radar systems, wireless networks, and point-to-point communication links. Test and Measurement: Employed in antenna testing, EMC testing, and RF measurements. Remote Sensing: Utilized in remote sensing applications for data collection and analysis.

4.Advantages: High Gain: Offers high gain, making it suitable for long-distance communication. Low Sidelobes: Typically exhibits low sidelobes, enhancing its ability to focus energy in the desired direction. Durable Construction: Can be constructed from materials suitable for outdoor and harsh environments.

5.Variants: Pyramidal Horn: A variation with a square or rectangular aperture instead of a conical shape. Exponential Horn: Features a continuously flaring profile, offering broadband performance.

Overall, conical horn antennas are valued for their directional properties, frequency versatility, and suitability for various communication and sensing applications.

Specification

Model	SH-AnT-0118
Antenna form	Cone horn
Frequency Range	1GHz~18GHz
Standing wave	≤3
Polarization	Horizontal and vertical dual linear polarization
Sidelobe suppression	10~70 °
Sidelobe suppression	E-side 8 dB; H-side 13 dB
Gain	2~21dB(Need to test 1-2GHz1-2GHz)
Two-port isolation	≥25dB
Interface form	SMA-50K
Oral size	≤193mm
Weight	≤2.4kg
Surface treatment	Conductive oxidation
Operating temperature	-40~70℃
Storage temperature	-55~80℃
Withstand power	800W

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9 ) 18-325 GHz Rectangular Waveguide Horn Antenna for Audio, Television with High Direction

Product Description

18-325 GHz Rectangular Waveguide Horn Antenna for Audio, Television with High Direction

Description

Rectangular horns are one of our most popular antennas. Each horn is precisely electrocast and gold-plated on the mandrel. These horns have maximum return loss and the gain from 22 to 24dB. Special orders can be made for horns with different gains, Dimension of this antenna is from WR3 to WR42. The rectangular waveguide horn antenna with a gain ranging from 22 dB to 24 dB, operating in the frequency range of 18 GHz to 325 GHz, is a type of antenna designed for microwave and millimeter-wave applications. This antenna is commonly used in radar systems, communication systems, wireless networks, as well as in astronomy and remote sensing applications.

Part Name	WR	Frequency (GHz)	VSWR	WG A DIM	WG B DIM	Height-H	Length-L	Width-W	Flange
SWT42S	42	18 - 26.5	1.1:1	0.42 in	0.17 in	3.064 in	7.48 in	4.068 in	S 0.875
SWT42S	28	26.5 - 40	1.1:1	0.28 in	0.14 in	2.069 in	5.0 in	2.712 in	S 0.750
SWT22R	22	33 - 50	1.1:1	0.224 in	0.112 in	1.656 in	4.07 in	2.17 in	R 1.125
SWT19R	19	40 - 60	1.1:1	0.188 in	0.094 in	1.39 in	3.48 in	1.821 in	R 1.125
SWT15R	15	50 - 75	1.1:1	0.148 in	0.074 in	1.094 in	2.78 in	1.434 in	R 0.750
SWT12R	12	60 - 90	1.1:1	0.122 in	0.061 in	0.902 in	2.35 in	1.182 in	R 0.750
SWT10R	10	75 - 110	1.1:1	0.10 in	0.05 in	0.74 in	1.94 in	0.969 in	R 0.750
SWT8R	8	90 - 140	1.1:1	0.08 in	0.04 in	0.591 in	1.56 in	0.775 in	R 0.750
SWT6R	6	110 - 175	1.1:1	0.065 in	0.0325 in	0.481 in	1.26 in	0.63 in	R 0.750
SWT5R	5	140 - 220	1.1:1	0.051 in	0.0255 in	0.377 in	1.04 in	0.494 in	R 0.750
SWT4R	4	170 - 260	1.1:1	0.043 in	0.0215 in	0.318 in	0.86 in	0.417 in	R 0.750
SWT3R	3	220 - 325	1.1:1	0.034 in	0.017 in	0.251 in	0.71 in	0.329 in	R 0.750

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10 ) 6-18GHz 40dB Dual Polarized High Isolation Antenna for communication system

Product Description

6-18 G 40 dB Dual Polarized High Isolation Antenna for communication system

The 6-18 GHz 40 dB Dual Polarized High Isolation Antenna is a professional antenna designed for communication systems, featuring: Frequency Range: Covers frequencies from 6 to 18 GHz, encompassing many common communication bands. 40 dB High Isolation: Uniquely designed to achieve up to 40 dB of polarization isolation, effectively reducing polarization interference. Dual Polarization Design: Supports both horizontal and vertical polarization, offering flexibility for different communication scenarios and requirements. Specialized Communication Applications: Suitable for radar, satellite communication, radio links, and other fields, with stable and reliable performance. High-Performance Materials: Manufactured with premium materials to ensure excellent performance and durability in various environments. This antenna plays a crucial role in communication systems, providing a stable and efficient solution for signal transmission.

Model	SH-AnJ-0618
Antenna form	Pyramid Horn
Frequency Range	6GHz~18GHz
Standing wave	≤2
Polarization	Single linear polarization
Gain	10～18dB
Interface form	SMA-50K
Oral size	73.2x58.16mm
Weight	≤0.4kg
Surface treatment	Conductive oxidation
Operating temperature	-40~70℃
Storage temperature	-55~80℃

Product Description

6-18 G 40 dB Dual Polarized High Isolation Antenna for communication system

Product Description

The 6-18 GHz 40 dB Dual Polarized High Isolation Antenna is a professional antenna designed for communication systems, featuring: Frequency Range: Covers frequencies from 6 to 18 GHz, encompassing many common communication bands. 40 dB High Isolation: Uniquely designed to achieve up to 40 dB of polarization isolation, effectively reducing polarization interference. Dual Polarization Design: Supports both horizontal and vertical polarization, offering flexibility for different communication scenarios and requirements. Specialized Communication Applications: Suitable for radar, satellite communication, radio links, and other fields, with stable and reliable performance. High-Performance Materials: Manufactured with premium materials to ensure excellent performance and durability in various environments. This antenna plays a crucial role in communication systems, providing a stable and efficient solution for signal transmission.

Model	SH-AnJ-0618	Antenna form	Pyramid Horn
Frequency Range	6GHz~18GHz	Standing wave	≤2
Polarization	Single linear polarization	Gain	10～18dB
Interface form	SMA-50K	Oral size	73.2x58.16mm
Weight	≤0.4kg	Surface treatment	Conductive oxidation
Operating temperature	-40~70℃	Storage temperature	-55~80℃

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Product Description

Description
The module is designed for both Industrial and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package.

Specification

Typical performance at +28V DC +25oC, and in a 50Ω system.

RF / ELECTRICAL
PARAMETER	MIN	TYP.	MAX	UNIT
Operating Frequency	20		280	MHz
RF INPUT		-2		dBm
Power Gain@ can be adjust by Potentiometer		45		dB
P-1dB Power Output		43		dBm
Frequency response@ Temp		±0.5		dB
Frequency response @ 20-280 MHz		±2		dB
Frequency response @ 40-100 MHz		±1		dB
Harmonic		-20		dBc
Spurious		-50		dBc
Input VSWR			1.5
Operating Voltage	24	28		VDC
In-Out impedance		50		Ω
Current		4	5	A

Product Description

Description
The chassis is designed for both Industrial and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package.

Specification

Typical performance at 220V AC +25oC, and in a 50Ω system.

RF / ELECTRICAL
PARAMETER	MIN	TYP.	MAX	UNIT
Operating Frequency	1000		6000	MHz
RF INPUT		0	5	dBm
Power Gain		50		dB
P-1dB Output Power		50		W
P-sat Output Power		100		W
Power Gain Flatness		±4		dB
In/Out Impedance		50		Ω
Spurious Signals			-65	dBc
Harmonic Signals		-15		dBc
Gain Adjust Range		31.5
Gain Adjust Ste		0.5
Operating Voltage	200	220	240	V AC
Supply Power			1600	W
Input VSWR			2

Product Description

Description
The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package.

Specification

Typical performance at +28 VDC +25oC, and in a 50Ω system.

PARAMETER	MIN	TYP.	MAX	UNIT
Operating Frequency	500		3000	MHz
PSat Power Output		50		dBm
RF Intput		0		dBm
In/Out Impedance	50			Ω
Operating Voltage		28	30	V
Power consumption		420	500	W
Operating Temp. (Housing Temp.)	-20	+25	+55	℃
Dimensions (L x W x H)	250*160*25			mm3
Weight	≤4			kg
Cooling	Requires external radiator for heat dissipation

Interface Definition

INTFACE CODE	INTERDACE TYPE	INTERFACE FUNCATION	NOTE
RFIN	SMA-K	RF Input
RFOUT	N-K	RF Output
DC	D-SUB 2W2(M)	Power Supply Port

DSUB 2W2 Male Definition

PIN	DEFINITION	FUNCATION	NOTE
A1	VDD	+28V	Power Positive
A2	GND	GDN	Power Negative

Product Description

9 KHz - 250 MHz EMC Amplifier rackmount High Power Psat 500W RF Power Amplifier

Description
The 9 kHz - 250 MHz EMC Amplifier with Psat 500W is a high-power RF amplifier designed for electromagnetic compatibility (EMC) testing and other high-power applications within the 9 kHz to 250 MHz frequency range. Key features include:
• Frequency Range: Covers a broad frequency range from 9 kHz to 250 MHz, making it ideal for EMC testing, signal generation, and other applications in this low-frequency RF range.
• High Power Output (Psat 500W): The amplifier delivers a saturation power (Psat) of up to 500W, capable of handling high power levels while maintaining reliable performance and linearity.
• Rackmount Design: The amplifier is designed to be installed in a standard 19-inch rack, making it suitable for integration into test environments, laboratories, and field setups.

Applications:
This high-power EMC amplifier is commonly used in:
• EMC Testing: In laboratories and testing facilities for emissions testing, immunity testing, and other compliance evaluations to ensure devices meet electromagnetic compatibility standards.
• Signal Generation: Used in applications requiring high-power RF signal generation, such as for broadcasting, radar, or communications.
• Wireless Communication: In testing and development of wireless systems and devices that must be tested for signal integrity and performance under high power conditions.
• Military and Aerospace: Used in RF testing for military and aerospace equipment to ensure reliability and compliance with electromagnetic environment standards.
• Electromagnetic Interference (EMI) Studies: In research and development for studying EMI and testing devices under varying electromagnetic conditions.

The 9 kHz - 250 MHz EMC Amplifier with Psat 500W is ideal for high-power RF testing applications, providing reliable and high-performance amplification for compliance testing, signal generation, and other industrial, scientific, and military use cases.

Specification

Typical performance at 220V AC +25oC, and in a 50Ω system.

RF / ELECTRICAL
PARAMETER	MIN	TYP.	MAX	UNIT
Operating Frequency	0.009		250	MHz
RF INPUT		0	5	dBm
Power Gain	57			dB
P-1dB Output Power	300			W
P-sat Output Power	500			W
Power Gain Flatness		±4		dB
In/Out Impedance	50			Ω
Spurious Signals			-65	dBc
Harmonic Signals		-15	-8	dBc
Gain Adjust Range		31.5
Gain Adjust Ste		0.5
Operating Voltage	200	220	260	V AC
Supply Power			3500	W
Input VSWR			4

MECHANICAL

PARAMETER	VALUE	UNIT
Dimensions (W x D x H)	The standard 19-inch shelf is 5U high, 482*600*223	mm
RF Connectors (Input / Output)	N-K / N-K (N female)	--
Control Connector (Option1)	DB9:Power on/power off control, gain control; Monitoring parameters include output power, temperature, supply voltage, and supply current	--
Control Connector (Option2)	RJ45:Remote control and monitoring can be realized through LAN
Cooling	Built-in cooling system, forced air cooling	--
Weight	≤40	kg
AC Connector	Three-in-one air switch

ENVIRONMENTAL / PROTECTIONS

PARAMETER	MIN	MAX	UNIT
Operating Temp.	-25	+55	°C
Housing Temp.	-45	+55	°C
Amplifier Safeguard Temp.		+80	°C
Protections	With over temperature protection, input over power protection, over voltage protection, over current protection, output mismatch protection
Maximum withstand standing wave	6:1

INPUT/OUTPUT panel Connector

NUMBER	interface type	DESCRIPTION
X1	N-FK	RF IN
X2	N-FK	RF OUT
X3	LCD display	Human-computer interaction interface
X4	Three-in-one air switch	AC/220V/50Hz
X5	RJ45	LAN
X6	DB9	Control interface
X7	N-FK	Forward coupling port
X8	N-FK	Reverse coupling port

Connector Definition

NUMBER	Definition	DESCRIPTION
1	PA Enable	TTL Hi= Enable, TTL Lo = Disable or No Connection
2	Output Power monitoring	Output Power Detection (TTL Hi= Normal , TTL Lo =Fault )
3	Temp monitoring	Temp monitoring alarm (TTL Hi= Normal , TTL Lo =Fault )
4	Voltage monitoring	Voltage monitoring alarm (TTL Hi= Normal , TTL Lo =Fault )
5	Current monitoring	Current monitoring alarm (TTL Hi= Normal , TTL Lo =Fault )
6	RXD	RS232 serial bus interface, PA gain adjustment
7	TXD
8	GND
9	NC	NC

Product Description

Description
The module is designed for commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package.

Specification

Typical performance at +28 VDC +25oC,and in a 50Ω system.

RF / ELECTRICAL
PARAMETER	MIN	TYP.	MAX	UNIT
Operating Frequency	10400		10600	MHz
RF INPUT		0		dBm
P-sat Power Output	46		48.5	dBm
Power Gain		49		dB
Power Gain Flatness		±1		dB
Harmonic Signals		-20		dBc
Spurious emission		-55		dBc
Noise Figure			10	dB
Gain Control range	0		31.5	dB
Gain Control step		0.5		dB
Phase Control range	0		354.375	°
Phase Control step		5,625		°
Input VSWR		1.5	2
Operating Voltage		28		V DC
Currents		20		A
In-Out impedance		50		Ω

MECHANICAL

PARAMETER	VALUE	UNIT
Dimensions (Lx W x H)	350*280*120	mm
RF Connectors (Input / Output)	SMA- KFD/ Waveguide WR90	--
DC / Control Connector	D-SUB 7W2	--
Cooling	Consider heat dissipation with the system(TBD)	--
Mounting	φ3-8 Thru Hole	--
Weight	≤10(Excluding radiator)	kg

ENVIRONMENTAL / PROTECTIONS

PARAMETER	MIN	MAX	UNIT
Operating Temp. (Housing Temp.)	-30	+55	°C
Humidity Range	0-100		%
PA Baseplate Shutoff Temperature		+ 70	°C

INPUT/OUTPUT PINS

PIN NUMBER	LABEL	DESCRIPTION
A1	+VDC	+28V
A2	GND	Ground
1	GND	Ground
2	Amp Enable	Disable: TTL “Low”, Enable : TTL “High” (Low : 0~0.5V, High : 2.5~5V)
3	RS485A	Gain control, status reporting(Power detection and VSWR detection, temperature alarm and other states)
4	RS485B
5	GND

Product Description

Description
The module is designed for both Industrial and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package.

Specification

Typical performance at +28VDC +25oC, and in a 50Ω system.

RF / ELECTRICAL
PARAMETER	MIN	TYP.	MAX	UNIT
Operating Frequency	10000		13000	MHz
RF INPUT	0	3	5	dBm
P-sat Power Output	42	43	45	dBm
Power Gain Flatness		±1.5		dB
Spurious Signals		-50		dB
Input VSWR		1.8	2
Operating Voltage	28	30	32	VDC
In-Out impedance		50		Ω
Current		3		A

MECHANICAL

PARAMETER	VALUE	UNIT
Dimensions (L x W x H)	60*70* 15	mm
RF Connectors (Input / Output)	SMA female/SMA female	--
DC / Control Connector	Feeding Capacitor	--
Cooling	Consider heat dissipation with the system	--
Mounting	3-6 Thru Hole	--
Weight	≤1.5	kg

ENVIRONMENTAL / PROTECTIONS

PARAMETER	MIN	MAX	UNIT
Operating Temp. (Housing Temp.)	-40	+60	°C
Humidity Range	0-100		%
PA Baseplate Shutoff Temperature		+ 90	°C

INPUT/OUTPUT panel Connector

NUMBER	interface type	DESCRIPTION
X1	SMA female	RF IN
X2	SMA female	RF OUT
X3	Feeding Capacitor	DC and Control Interface

Product Description

High Gain and Linearity 2-6GHz 2W Ultra-Broadband Communication Module RF Power Amplifier for RF Testing

This 2000-6000MHz RF power amplifier covers a wide frequency range with an output power of up to 2W. It is suitable for a variety of applications, including wireless communication, radar systems, and RF testing. The amplifier features high gain and good linearity, ensuring stable power output under different operating conditions while maintaining signal integrity.

Key Features:
• Wide Frequency Coverage: Supports the 2000-6000MHz frequency range, suitable for various wireless communication and testing scenarios.
• High Power Output: Provides 2W of output power, ideal for medium-power applications.
• High Gain and Linearity: Maintains low distortion and high signal quality during amplification, ensuring excellent signal integrity.
• Compact Design: Small and easy to integrate into various systems.

This amplifier is an ideal choice for medium-power RF systems, particularly for applications requiring wideband coverage and high performance in communication and testing environments.

Specification

Typical performance at +24VDC +25oC,and in a 50Ω system.

RF / ELECTRICAL
PARAMETER	MIN	TYP.	MAX	UNIT
Operating Frequency	2000		6000	MHz
RF INPUT		0		dBm
P-1dB Power Output	33			dBm
Power Gain	33			dB
Power Gain Flatness		±2	±3	dB
Input VSWR			2
Operating Voltage		28		VDC
In-Out impedance		50

MECHANICAL

PARAMETER	VALUE	UNIT
Dimensions (L x W x H)	62.6*60.6*24	mm
RF Connectors (Input / Output)	SMA- KFD/ SMA- KFD	--
DC / Control Connector	J30J-15ZKP	--
Cooling	Consider heat dissipation with the system	--
Mounting	φ2.8-4 Thru Hole	--
Weight	≤1	kg

ENVIRONMENTAL / PROTECTIONS

PARAMETER	MIN	MAX	UNIT
Operating Temp. (Housing Temp.)	0	+50	°C
Humidity Range	0-100		%

INPUT/OUTPUT PINS

PIN NUMBER	LABEL	DESCRIPTION
1-3	+VDC	+28V
4-6	GND	Ground
7	Amp Enable	Disable : TTL "High", Enable: TTL "Low" (Low : 0~0.5V, High : 2.5~5V)
8-15	NC	NC

Product Description

Customized Ultra-Broadband 400-6000MHz All-Alumium Cavity Solid State RF Power Amplifier for Electronic Warfare

The 400-6000MHz 2W RF power amplifier is a high-performance, medium-power device suitable for various RF and wireless communication applications. Key features include:

1. Wide Frequency Range: Covers 400MHz to 6000MHz, suitable for diverse communication and testing scenarios.
2. 2W Output Power: Provides 33dBm output, ideal for medium-range signal transmission.
3. High Gain: Delivers 30dB gain, effectively amplifying signals.
4. Compact Design: Small form factor for easy integration.

Applications: Used in wireless communication, testing equipment, radar, and electronic warfare to enhance signal transmission and system performance.

Specification

Typical performance at +24VDC +25oC,and in a 50Ω system.

RF / ELECTRICAL
PARAMETER	MIN	TYP.	MAX	UNIT
Operating Frequency	400		6000	MHz
Oeration mode	Seep frequency source
P-sat Power Output	46.5	47		dBm
Power Gain Flatness		±2.5		dB
Input VSWR			2
Operating Voltage		28		VDC
In-Out impedance		50
Current		7	8	A

MECHANICAL

PARAMETER	VALUE	UNIT
Dimensions (L x W x H)	200x150x30	mm
RF Connectors (Input / Output)	N- KFD	--
DC / Control Connector	D SUB 7W2	--
Cooling	Consider heat dissipation with the system	--
Mounting	3-6 Thru Hole	--
Weight	≤1.5	kg

ENVIRONMENTAL / PROTECTIONS

PARAMETER	MIN	MAX	UNIT
Operating Temp. (Housing Temp.)	-40	+60	°C
Humidity Range	0-100		%
PA Baseplate Shutoff Temperature		+ 90	°C

INPUT/OUTPUT PINS

PIN NUMBER	LABEL	DESCRIPTION
A1	+VDC	+28V
A2	GND	Ground
1-2	NC	NC
3	RS485A	Gain Control and Seep speed Control
4	RS485B
5	GND

Product Description

Customized 400-6000MHz 100W Solid State High Power broadband RF Amplifier for UAV jamming

Product Description
The 100W power amplifier operating in the frequency range of 400MHz to 6000MHz is a versatile and powerful component used in a wide range of communication and RF applications.

Its key features include:
High Power Output: With a power output of 100 watts, this amplifier provides significant power for driving RF systems, including transmitters, amplifiers, and RF-based equipment.
Wide Frequency Range: Covering frequencies from 400MHz to 6000MHz, it spans multiple bands and is suitable for various applications such as mobile communication, radar systems, satellite communication, and electronic warfare.
High Efficiency: Designed for high efficiency, this amplifier optimizes power consumption while delivering robust performance, making it ideal for applications where power efficiency is crucial.
Reliability and Stability: Engineered for reliability and stability, it maintains consistent performance across different operating conditions, ensuring dependable operation in demanding environments.

This 100W power amplifier is a valuable asset in RF design, offering high power, wide frequency coverage, and efficient operation.

The 100W power amplifier operating in the 400MHz to 6000MHz frequency range is a versatile component with a wide range of applications in communication and RF systems.

Mobile Communication Systems: It drives base station equipment, providing high power output to enhance signal coverage and transmission distance, suitable for 2G, 3G, 4G, and 5G networks.
Radar Systems: Used for signal transmission and reception in radar applications, delivering sufficient power for long-range target detection and tracking.
Satellite Communication: Suitable for ground stations and satellite communication equipment, ensuring stable and efficient signal transmission for satellite communications.
Electronic Warfare Systems: In electronic warfare equipment, it can be used for jamming or countering opponent RF signals, providing robust interference and countermeasure capabilities.
Industrial and Scientific Applications: Used in scientific research, medical equipment, wireless measurements, etc., providing reliable RF power support.
Aerospace Applications: Suitable for communication systems in aircraft, satellites, and spacecraft, ensuring reliable data transmission and communication links.

Overall, this power amplifier's applications span multiple fields including communication, radar, satellite communication, electronic warfare, industrial science, aerospace, and broadcasting, providing robust power support and signal transmission capabilities for various RF applications.

Product Parameter

RF / ELECTRICAL
PARAMETER	MIN	TYP.	MAX	UNIT
Operating Frequency	400		6000	MHz
RF INPUT		-10		dBm
Power Gain		60		dB
P-sat Output Power	49.5	50		dBm
Power Gain Flatness		±4		dB
In/Out Impedance	50			Ω
Spurious Signals		-40		dBc
Harmonic Signals		-15		dBc
Operating Voltage		28		V
Supply Power			500	W
Input VSWR			2

MECHANICAL

PARAMETER	VALUE	UNIT
Dimensions (W x D x H)	300*192*25	mm
RF Connectors (Input / Output)	SMA-KF / SMA-FK	--
Control Connector	D-SUB:Power on/power off control; Monitoring parameters include output power, temperature	--
Cooling	Exteral Heatsink Required	--
Weight	≤4.5	kg

ENVIRONMENTAL / PROTECTIONS

PARAMETER	MIN	MAX	UNIT
Operating Temp.	-40	+85	°C
Storage Temp.	-40	+85	°C
Amplifier Safeguard Temp.		+90	°C
Shock	MIL-STD-810F/G
Vibration	MIL-STD-810F/G
Protections	With over temperature protection, input over power protection, over voltage protection, over current protection

INPUT/OUTPUT panel Connector

NUMBER	interface type	DESCRIPTION
X1	SMA-FK	RF IN
X2	SMA-FK	RF OUT
X6	D-SUB	DC & Control interface

Connector Definition

NUMBER	Definition	DESCRIPTION
1	VDD	28V
2	VDD	28V
3	GND	GND
4	GND	GND
5	PA Enable	TTL Hi= Enable, TTL Lo = Disable or No Connection
6	Alarm	Alarm (TTL)
7	Temp monitoring	Temperature (Analog)
8	NC	NC
9	NC	NC

Product Description

Main technical indicators

qualification	code	Min	TYP	Max	Unit
service frequency	BW	2		7.2	GHz
Saturation output power	Psat		100		W
interiorinput power	Pin		0		dBm
Input/output impedance	I/O-IMP	50			Ω
supply electricity	Vdc		28	30	V
power dissipation	Pdiss		600	1000	W
operating temperature range	OT	-20	+25	+55	℃
size	DM	400×350×40mm³
weight	WT	No more than 12Kg
heat radiation	Cooling	A radiator is required to dissipate heat

Interface definition

Interface code	interface type	interface function	remarks
RFIN	SMA-K	Radio frequency input
RFOUT	N-K	Radio frequency output
DC	DSUB 2W2 connector	Power supply interface

DSUB 2W2 connector definition

pin	definition	function	remarks
A1	VDD	+28V	Power is positive
A2	GND	GND	Negative power supply

Product Description

qualification	code	Min	TYP	Max	Unit
service frequency	BW	2		7.2	GHz
Saturation output power	Psat		50		W
interiorinput power	Pin		0		dBm
Input/output impedance	I/O-IMP	50			Ω
supply electricity	Vdc		28	30	V
power dissipation	Pdiss		300	500	W
operating temperature range	OT	-20	+25	+55	℃
size	DM	250×220×40mm³
weight	WT	No more than 7kg
heat radiation	Cooling	A radiator is required to dissipate heat

Interface definition

Interface code	interface type	interface function	remarks
RFIN	SMA-K	Radio frequency input
RFOUT	N-K	Radio frequency output
DC	DSUB 2W2 connector	Power supply interface

DSUB 2W2 connector definition

pin	definition	function	remarks
A1	VDD	+28V	Power is positive
A2	GND	GND	Negative power supply

Product Description

Main Technical Specifications

Parameter	Code	Min	TYP	Max	Unit
Operating Frequency	BW		2.45		GHz
Saturated Output Power	Psat		10		W
Input Power	Pin		0		dBm
Power Gain	Gp		40		dB
Input VSWR	VSWRin			2.0
Input/Output Impedance	I/O-IMP	50			Ω
Supply Voltage	Vdc		28		V
Power Dissipation (CW)	Pdiss		40		W
Operating Temperature Range	OT	-10		+55	℃
Dimensions	DM	100*80*20mm
Weight	WT	Not exceeding 0.4Kg
Cooling Requirement	Cooling	Requires external heat sink

Connector Definitions

Connector Code	Connector Type	Function	Notes
X1	SMA	RF Input
X2	SMA	RF Output
X3	Feed Capacitor	+28V Power Supply	Power connecto

Frequency: 10400 – 10600 MHz

Output Power: 70W

Gain: 49 dB

Voltage: 28V DC

Product Description

40W Special Ka-Band (27.5-30.0 GHz) BUC

This unique first ever 40W L-To Ka-BandBlock Up Converter covers the 27.5-30.0 GHzfrequency bands. M&C(FSK) capabilityenables trouble shooting, monitoring andcontrolling the Buc. Unit provides10MHz reference autosensing feature.

Key Features:
• Output frequency 27.5-30.0 GHZ
• Based on GaN technology which enables highefficiency, low power consumption and high reliabilityTriple L.0. (electronicaly and manually switchable26.55,27.1 and 28.05 GHz)
• Low power consumption (340w max)M&C-combined RS-232/485,FSK and Ethernetcontrol (HTTP and SNMP)
• L.0. lock, amplifier and 10MHz LEDS
• Built-in redundancy optionField-exchangeable (F/N)lF connectorInternal 10MHz high stability reference autosensingand controlable (optional)RoHS compliant

Specification

Parameter	Specification
RF frequency	27.5 - 30.0 GHz
Triple local oscillator	28.55, 27.1 and 28.05 GHz
IF frequency	950 to 1,950 MHz
Output power	40W (+48 dBm min.), P-Linear 22.7W (+43.5 dBm min.)
IF connector	N-type or F-type (field-exchangeable)
Power supply (auto-ranging via M3 connector)	+38 VDC ~ +60 VDC, 340W max.
Output interface	WR-28 G
Gain	65 dB typ. 80 dB min.
IM03 (two tones)	-28 dBc
NPR with 500 MHz signal BW, Notch 10 MHz	14 dB @Fast, 18 dB @Plin
Spurious	-56 dBc
EVM symbol rate 500M; 15dB/50Hz roll-off 0.2 RRC	typical 5% specification:12%
EM symbol rate 500M; 15dB/50Hz, 1500MHz roll-off 0.2 RRC	special region:12%
QDPSK at 1.5x and QDPSK at 1.0x symbol rate offset with 2dB	-30 dBc
Requirement for external reference (via IF cable)	10 MHz (sine-wave) -5 to +5 dBm @ input port
Internal reference frequency	True
TX Gain variation	< 4 dB full band
TX Gain stability over temperature range	< 1.6 dB @ 500 MHz
Group delay	2 ns within 200 MHz 4 ns within 500 MHz 10 ns full band
Phase noise (Exceeds Intelsat's standard IESS308/300)	-56 dBc/Hz max. @ 10 Hz -56 dBc/Hz max. @ 100 Hz -78 dBc/Hz max. @ 1 KHz -86 dBc/Hz max. @ 10 KHz -94 dBc/Hz max. @ 100 KHz -112 dBc/Hz max. @ 1 MHz
Noise power density	-66 dBm/Hz (max.)
Receive	-157 dBm/Hz (max.)
FSK	Multiplexed on TX FL, compatible with Compech and Paradigm
MAC Interface	RS-232 and RS-485, Ethernet (HTTP, SNMP), LCD required
Input V.S.W.R.	1.5 : 1 max.
Output V.S.W.R.	1.5 : 1 max.
Mute	Shut off the HPA if L.O. unlocked
Mute dry-contacts	True
Status LED	RED - ALARM GREEN BLINKING - L.O. SSPA OK GREEN GREEN BLINKING YELLOW - AIDOK L.O. 28.55 GHz GREEN GREEN BLINKING RED - AIDOK L.O. 27.1 GHz AIDOK L.O. 28.05 GHz EXTERNAL 10 MHz DETECTED INTERNAL 10 MHz NO EXTERNAL REFERENCE
Temperature range (ambient)	Operating: -40°C to +60°C Storage: -55°C to +85°C
Vibration and shock	Complies with MIL-STD-810E
IP rating	IP67
Dimensions & housing	140 (L) x 122.4 (W) x 84 (H) mm 5.5" (L) x 4.8" (W) x 3.3" (H)
Weight	2.2 kg (4.85 lbs) max.

Product Description

100W Special Ka-Band (27.5-30.0 GHz) BUC

This unique first ever 40W L-To Ka-BandBlock Up Converter covers the 27.5-30.0 GHzfrequency bands. M&C(FSK) capabilityenables trouble shooting, monitoring andcontrolling the Buc. Unit provides10MHz reference autosensing feature.

Key Features:
• Output frequency 27.5-30.0 GHZ
• Based on GaN technology which enables highefficiency, low power consumption and high reliabilityTriple L.0. (electronicaly and manually switchable26.55,27.1 and 28.05 GHz)
• Low power consumption (340w max)M&C-combined RS-232/485,FSK and Ethernetcontrol (HTTP and SNMP)
• L.0. lock, amplifier and 10MHz LEDS
• Built-in redundancy optionField-exchangeable (F/N)lF connectorInternal 10MHz high stability reference autosensingand controlable (optional)RoHS compliant

Specification

Parameter	Specification
RF frequency	27.5 - 30.0 GHz
Triple local oscillator	28.55, 27.1 and 28.05 GHz
IF frequency	950 to 1,950 MHz
Output power	40W (+48 dBm min.), P-Linear 22.7W (+43.5 dBm min.)
IF connector	N-type or F-type (field-exchangeable)
Power supply (auto-ranging via M3 connector)	+38 VDC ~ +60 VDC, 340W max.
Output interface	WR-28 G
Gain	65 dB typ. 80 dB min.
IM03 (two tones)	-28 dBc
NPR with 500 MHz signal BW, Notch 10 MHz	14 dB @Fast, 18 dB @Plin
Spurious	-56 dBc
EVM symbol rate 500M; 15dB/50Hz roll-off 0.2 RRC	typical 5% specification:12%
EM symbol rate 500M; 15dB/50Hz, 1500MHz roll-off 0.2 RRC	special region:12%
QDPSK at 1.5x and QDPSK at 1.0x symbol rate offset with 2dB	-30 dBc
Requirement for external reference (via IF cable)	10 MHz (sine-wave) -5 to +5 dBm @ input port
Internal reference frequency	True
TX Gain variation	< 4 dB full band
TX Gain stability over temperature range	< 1.6 dB @ 500 MHz
Group delay	2 ns within 200 MHz 4 ns within 500 MHz 10 ns full band
Phase noise (Exceeds Intelsat's standard IESS308/300)	-56 dBc/Hz max. @ 10 Hz -56 dBc/Hz max. @ 100 Hz -78 dBc/Hz max. @ 1 KHz -86 dBc/Hz max. @ 10 KHz -94 dBc/Hz max. @ 100 KHz -112 dBc/Hz max. @ 1 MHz
Noise power density	-66 dBm/Hz (max.)
Receive	-157 dBm/Hz (max.)
FSK	Multiplexed on TX FL, compatible with Compech and Paradigm
MAC Interface	RS-232 and RS-485, Ethernet (HTTP, SNMP), LCD required
Input V.S.W.R.	1.5 : 1 max.
Output V.S.W.R.	1.5 : 1 max.
Mute	Shut off the HPA if L.O. unlocked
Mute dry-contacts	True
Status LED	RED - ALARM GREEN BLINKING - L.O. SSPA OK GREEN GREEN BLINKING YELLOW - AIDOK L.O. 28.55 GHz GREEN GREEN BLINKING RED - AIDOK L.O. 27.1 GHz AIDOK L.O. 28.05 GHz EXTERNAL 10 MHz DETECTED INTERNAL 10 MHz NO EXTERNAL REFERENCE
Temperature range (ambient)	Operating: -40°C to +60°C Storage: -55°C to +85°C
Vibration and shock	Complies with MIL-STD-810E
IP rating	IP67
Dimensions & housing	140 (L) x 122.4 (W) x 84 (H) mm 5.5" (L) x 4.8" (W) x 3.3" (H)
Weight	2.2 kg (4.85 lbs) max.

Product Description

40W Special Ka-Band (27.5-30.0 GHz) BUC

This unique first ever 40W L-To Ka-BandBlock Up Converter covers the 27.5-30.0 GHzfrequency bands. M&C(FSK) capabilityenables trouble shooting, monitoring andcontrolling the Buc. Unit provides10MHz reference autosensing feature.

Key Features:
• Output frequency 27.5-30.0 GHZ
• Based on GaN technology which enables highefficiency, low power consumption and high reliabilityTriple L.0. (electronicaly and manually switchable26.55,27.1 and 28.05 GHz)
• Low power consumption (340w max)M&C-combined RS-232/485,FSK and Ethernetcontrol (HTTP and SNMP)
• L.0. lock, amplifier and 10MHz LEDS
• Built-in redundancy optionField-exchangeable (F/N)lF connectorInternal 10MHz high stability reference autosensingand controlable (optional)RoHS compliant

Specification

Parameter	Specification
RF frequency	27.5 - 30.0 GHz
Triple local oscillator	28.55, 27.1 and 28.05 GHz
IF frequency	950 to 1,950 MHz
Output power	40W (+48 dBm min.), P-Linear 22.7W (+43.5 dBm min.)
IF connector	N-type or F-type (field-exchangeable)
Power supply (auto-ranging via M3 connector)	+38 VDC ~ +60 VDC, 340W max.
Output interface	WR-28 G
Gain	65 dB typ. 80 dB min.
IM03 (two tones)	-28 dBc
NPR with 500 MHz signal BW, Notch 10 MHz	14 dB @Fast, 18 dB @Plin
Spurious	-56 dBc
EVM symbol rate 500M; 15dB/50Hz roll-off 0.2 RRC	typical 5% specification:12%
EM symbol rate 500M; 15dB/50Hz, 1500MHz roll-off 0.2 RRC	special region:12%
QDPSK at 1.5x and QDPSK at 1.0x symbol rate offset with 2dB	-30 dBc
Requirement for external reference (via IF cable)	10 MHz (sine-wave) -5 to +5 dBm @ input port
Internal reference frequency	True
TX Gain variation	< 4 dB full band
TX Gain stability over temperature range	< 1.6 dB @ 500 MHz
Group delay	2 ns within 200 MHz 4 ns within 500 MHz 10 ns full band
Phase noise (Exceeds Intelsat's standard IESS308/300)	-56 dBc/Hz max. @ 10 Hz -56 dBc/Hz max. @ 100 Hz -78 dBc/Hz max. @ 1 KHz -86 dBc/Hz max. @ 10 KHz -94 dBc/Hz max. @ 100 KHz -112 dBc/Hz max. @ 1 MHz
Noise power density	-66 dBm/Hz (max.)
Receive	-157 dBm/Hz (max.)
FSK	Multiplexed on TX FL, compatible with Compech and Paradigm
MAC Interface	RS-232 and RS-485, Ethernet (HTTP, SNMP), LCD required
Input V.S.W.R.	1.5 : 1 max.
Output V.S.W.R.	1.5 : 1 max.
Mute	Shut off the HPA if L.O. unlocked
Mute dry-contacts	True
Status LED	RED - ALARM GREEN BLINKING - L.O. SSPA OK GREEN GREEN BLINKING YELLOW - AIDOK L.O. 28.55 GHz GREEN GREEN BLINKING RED - AIDOK L.O. 27.1 GHz AIDOK L.O. 28.05 GHz EXTERNAL 10 MHz DETECTED INTERNAL 10 MHz NO EXTERNAL REFERENCE
Temperature range (ambient)	Operating: -40°C to +60°C Storage: -55°C to +85°C
Vibration and shock	Complies with MIL-STD-810E
IP rating	IP67
Dimensions & housing	140 (L) x 122.4 (W) x 84 (H) mm 5.5" (L) x 4.8" (W) x 3.3" (H)
Weight	2.2 kg (4.85 lbs) max.

Product Description

High Power, High Efficiency 12.9-13.1GHz 120W RF Power Amplifier for Satellite Communication, Microwave Transmission

The 12.9-13.1GHz 120W RF power amplifier is designed for satellite communication, radar systems, microwave transmission, and RF testing, providing high power, high efficiency, and excellent signal stability.

Key Features:
• Operating Frequency: 12.9-13.1GHz, ideal for satellite and radar applications.
• High Power Output: 120W (Psat 50.8dBm), ensuring stable long-distance signal transmission.
• High Gain & Low Noise: Optimized for minimal distortion and superior signal quality.
• Efficient Cooling System: Advanced thermal management supports continuous and stable operation.
• Durable & Reliable: Designed for military, aerospace, industrial, and research applications.

This high-performance RF power amplifier is an ideal solution for microwave communication, radar signal amplification, and high-frequency RF applications, ensuring reliable and efficient signal transmission.

Specification

Typical performance at +28VDC +25oC, and in a 50Ω system.

RF / ELECTRICAL

PARAMETER	MIN	TYP.	MAX	UNIT
Operating Frequency	12.9		13.1	GHz
RF INPUT		0		dBm
Power Gain		51		dB
P-1dB Output Power		51		dBm
Power Gain temperature drift			3	dB
In/Out Impedance	50			Ω
Input VSWR			1.5
Spurious Signals		-55		dBc
IMD3@Output 42dbm @ two tone space 5MHz		-25		dBc
Operating Voltage		48		V DC
Power Dissipation			1500	W

Product Description

High Power Output 80W RF Power Amplifier Ku Band 12.9-13.1GHz Amplifier Module for Communication

The 12.9-13.1GHz 80W RF power amplifier is designed for satellite communication, radar systems, microwave transmission, and RF testing, offering high power, high linearity, and stable signal amplification.

Key Features:
• Operating Frequency: 12.9-13.1GHz, ideal for satellite and radar applications.
• High Power Output: 80W (Psat 49dBm), ensuring stable long-distance signal transmission.
• High Gain & Low Noise: Optimized circuit design minimizes signal distortion and enhances communication quality.
• Efficient Cooling System: Advanced thermal management enables long-term stable operation and improves device reliability.
• Durable & Versatile Design: Compatible with various RF systems, suitable for military, aerospace, industrial, and research applications.

This high-performance RF power amplifier is an ideal solution for microwave communication, radar signal amplification, and high-frequency RF applications, ensuring efficient and stable signal transmission.

Specification

Typical performance at +28VDC +25oC, and in a 50Ω system.

RF / ELECTRICAL

PARAMETER	MIN	TYP.	MAX	UNIT
Operating Frequency	12.9		13.1	GHz
RF INPUT		0		dBm
Power Gain		49		dB
P-1dB Output Power		49		dBm
Power Gain temperature drift			3	dB
In/Out Impedance	50			Ω
Input VSWR			1.5
Spurious Signals		-55		dBc
IMD3@Output 42dbm @ two tone space 5MHz		-25		dBc
Operating Voltage		48		V DC
Power Dissipation			1000	W

ENVIRONMENTAL / PROTECTIONS

PARAMETER	MIN	MAX	UNIT
OperatingTemp.(Housing Temp.)	-40	+60	°C
Humidity Range	0-100		%
PA Baseplate Shutoff Temperature		+ 90	°C

Product Description

Customized Durable & Versatile Design 12.9-13.1GHz 50W RF power amplifier for various RF systems

The 12.9-13.1GHz 50W RF power amplifier is designed for satellite communication, radar systems, microwave transmission, and RF testing, offering high power, high linearity, and stable signal amplification.

Key Features:
• Operating Frequency: 12.9-13.1GHz, ideal for satellite and radar applications.
• High Power Output: 50W (Psat 47dBm), ensuring stable long-distance signal transmission.
• High Gain & Low Noise: Optimized circuit design minimizes signal distortion and enhances communication quality.
• Efficient Cooling System: Advanced thermal management enables long-term stable operation and improves device reliability.
• Durable & Versatile Design: Compatible with various RF systems, suitable for military, aerospace, industrial, and research applications.

This high-performance RF power amplifier is an ideal solution for microwave communication, radar signal amplification, and high-frequency RF applications, ensuring efficient and stable signal transmission.

Specification

Typical performance at +28VDC +25oC, and in a 50Ω system.

RF / ELECTRICAL

PARAMETER	MIN	TYP.	MAX	UNIT
Operating Frequency	12.9		13.1	GHz
RF INPUT		0		dBm
Power Gain		47		dB
P-1dB Output Power		47		dBm
Power Gain temperature drift			3	dB
In/Out Impedance	50			Ω
Input VSWR			1.5
Spurious Signals		-55		dBc
IMD3@Output 42dbm @ two tone space 5MHz		-25		dBc
Operating Voltage		48		V DC
Power Dissipation			600	W

Product Description

8-11GHz 20w high-frequency signal amplification RF Power Amplifier Low Distortion Amplification

• Introduction
This is an RF power amplifier operating in the 8-11GHz frequency range, specifically designed for microwave applications. It is ideal for radar systems, satellite communications, electronic warfare, and scientific testing requiring high-frequency signal amplification.

• Key Features
 Frequency Range: Covers a wideband range of 8-11GHz, suitable for various microwave applications.
 High Output Power: Delivers output power ranging from tens to hundreds of watts, meeting the needs of long-distance communication and strong signals.
 Low Distortion Amplification: Features a linear design to minimize signal distortion and interference, ensuring high-quality output.
 High Efficiency: Optimized circuit design for high efficiency and low power consumption, supporting long-term stable operation.

• Design Highlights
 Robust Structure: Metal enclosure for excellent heat dissipation and electromagnetic shielding performance.
 Flexible Interfaces: Equipped with RF IN/OUT and DC & CONTROL interfaces, facilitating installation and integration.
 Thermal Management: Built-in or external cooling system to ensure stable operation under high-power conditions.

• Application Scenarios
 Radar Systems: Amplifies high-frequency signals, enhancing target detection capabilities.
 Satellite Communications: Used in ground stations or space communication to strengthen signal transmission.
 Electronic Warfare: Supports signal jamming and enhancement in military applications.
 Scientific Research: Assists laboratories in testing and analyzing high-frequency signals.

Specification

Typical performance at +28VDC +25oC, and in a 50Ω system.

RF / ELECTRICAL

PARAMETER	MIN	TYP.	MAX	UNIT
Operating Frequency	8000		11000	MHz
RF INPUT	0	3	5	dBm
Input level peak-to-peak:			10	dBm
P-sat Power Output	42	43	45	dBm
Power Gain Flatness		±1.5		dB
Harmonic Signals		-30		dB
Spurious Signals		-50		dB
Input VSWR		1.8	2
Operating Voltage	28	30	32	VDC
In-Out impedance		50		Ω
Current		3		A

MECHANICAL

PARAMETER	VALUE	UNIT
Dimensions (L x W x H)	119x80x82	mm
RF Connectors (Input / Output)	SMA female/SMA female	--
DC / Control Connector	J30J-15ZKP	--
Cooling	Consider heat dissipation with the system	--
Mounting	3-6 Thru Hole	--
Weight	≤1.5	kg

ENVIRONMENTAL / PROTECTIONS

PARAMETER	MIN	MAX	UNIT
Operating Temp. (Housing Temp.)	-40	+60	°C
Humidity Range	0-100		%
PA Baseplate Shutoff Temperature		+ 90	°C

Product Description

X-Band 8000-11000MHz 20W Wideband Amplifier Microwave RF Power Amplifier for Satellite Communications

Description

The 8-11GHz 20W RF Power Amplifier is extensively used in radar systems, satellite communications, wireless communications, and electronic warfare. Operating within the microwave frequency range, which includes the X-band and part of the Ku-band, this amplifier is designed to deliver high power, efficiency, and linearity to meet the demands of various high-frequency applications.

Key Features
1. Frequency Range: Covers the 8GHz to 11GHz frequency range.
2. Power Output: Delivers a high power output of 20 watts, suitable for demanding applications.
3. High Efficiency: Ensures high efficiency, reducing power consumption and heat generation.
4. High Linearity: Provides low distortion and high signal integrity, crucial for communication and radar systems.
5. Robust Design: Built with durable components and advanced thermal management, ensuring stable operation in various environments.

Application Areas
1. Radar Systems:
o Military Radar: Used for target detection and tracking, enhancing radar system detection range and resolution.
o Weather Radar: Utilized in meteorological monitoring to detect and analyze precipitation, wind speed, and other weather phenomena.
o Aviation Radar: Employed in air traffic control and flight safety to provide high-precision target detection and tracking.

2. Satellite Communications:
o Satellite Uplink and Downlink: Enhances signal amplification in satellite communication systems, ensuring stable and high-quality communication links.
o Ground Station Communication: Improves the transmission and reception performance of signals in satellite ground stations.

3. Wireless Communications:
o Point-to-Point Microwave Communication: Used for long-distance, high-bandwidth point-to-point communication links, providing stable high data rate transmission.
o Wireless Backhaul: Utilized in cellular networks and other wireless communication systems to connect base stations to the core network.

4. Electronic Warfare:
o Jamming and Countermeasures: Employed in military electronic warfare to generate jamming signals that disrupt enemy communications and radar systems.
o Signal Intelligence: Used to intercept and analyze enemy signals, providing critical information to support military operations.

5. Test and Measurement Equipment:
o Signal Generators and Analyzers: Used in test equipment to generate and measure high-precision, high-frequency RF signals.
o Laboratory and R&D: Supports signal amplification and processing in scientific research and technology development.

Technical Challenges
1. Thermal Management: High-power amplifiers generate significant heat, requiring effective thermal management to prevent overheating and performance degradation.
2. Power Management: Requires stable power management systems to ensure reliable operation under high power output conditions.
3. Linearity and Efficiency Optimization: Balancing high linearity with efficiency is a key challenge in RF power amplifier design.
4. Frequency Stability: Maintaining frequency stability at high frequencies to ensure reliable and consistent signal transmission.
5. Broadband Matching: Ensuring good input and output matching across the 8-11GHz frequency range to maintain stable and efficient signal transmission.

Specification

Typical performance at +28 VDC +25oC, and in a 50Ω system.

RF / ELECTRICAL

PARAMETER	MIN	TYP.	MAX	UNIT
Operating Frequency	8000		11000	MHz
RF INPUT		0	5	dBm
P-sat Power Output		43		dBm
Power Gain		43		dB
Power Gain Flatness		±3		dB
Input VSWR			2
Operating Voltage		28		VDC
In-Out impedance		50		Ω
Current		6	8	A

MECHANICAL

PARAMETER	VALUE	UNIT
Dimensions (L x W x H)	150 x 75 x 21.5	mm
RF Connectors (Input / Output)	SMA- KFD/ N- KFD	--
DC Connector	Feed Capacitor	--
Cooling	Consider heat dissipation with the system	--
Mounting	φ3.5-6 Thru Hole	--
Weight	≤2.5	kg

ENVIRONMENTAL / PROTECTIONS

PARAMETER	MIN	MAX	UNIT
Operating Temp. (Housing Temp.)	-40	+85	°C
Humidity Range	0-100		%
PA Baseplate Shutoff Temperature		+ 90	°C

Product Description

High gain 9-10GHz pulsed TWT RF Power Amplifier for Scientific Research and Medical Industry with linear amplification capability

The 9-10GHz 6kW TWT RF Power Amplifier is a high-power microwave amplifier designed for applications requiring significant power output in the 9-10GHz frequency band. This device employs Traveling Wave Tube (TWT) technology as the core amplification method, ensuring high gain, wide bandwidth, and stable output for a variety of high-frequency applications.

---

Key Features

• Frequency Range: 9GHz - 10GHz
• Output Power: 6kW (Peak Power)
• Amplification Technology: Traveling Wave Tube (TWT)
• Gain: High gain with linear amplification capability
• Cooling System: Integrated air or liquid cooling to maintain stable performance
• Power Supply: Customizable input power configurations
• Efficiency: High-efficiency power conversion
• Waveguide Interface: Standard waveguide output for seamless integration
• Control System: Built-in monitoring and protection circuits for reliability

---

Performance Highlights

1. High Power Output: Capable of delivering peak power up to 6kW, suitable for long-range and high-intensity signal transmission.
2. Wide Bandwidth: Covers the 9GHz-10GHz frequency range, ensuring stable operation across the entire spectrum.
3. Stable and Reliable: Advanced thermal management systems support continuous operation in demanding and harsh environments.
4. Precision Amplification: High linear gain ensures minimal signal distortion, ideal for applications requiring signal fidelity.
5. Robust Design: Durable construction with built-in protection circuits to safeguard the device against overvoltage, overheating, and load mismatches.

---

Applications:

• Radar Systems: High-power amplification for long-range radar systems in defense and aviation.
• Electronic Warfare (EW): Signal jamming, electronic countermeasures, and defense-based communication systems.
• Satellite Communication: Amplification for ground-based and airborne satellite transmitters.
• Scientific Research: Used in high-frequency experiments, particle accelerators, and microwave plasma generation.
• Medical Industry: Applications in oncology for radiation therapy systems, microwave ablation, and precision thermal therapies, providing efficient energy delivery for targeted treatments.
• Test and Measurement: Provides a stable high-power RF source for system testing, calibration, and high-frequency equipment validation.

---

Summary

The 9-10GHz 6kW TWT RF Power Amplifier is a reliable and high-performance solution for applications requiring significant RF power in the 9-10GHz range. Its advanced TWT technology, high efficiency, and robust design make it ideal for radar systems, satellite communication, electronic warfare, scientific research, and medical applications such as microwave-based cancer treatments and precision thermal therapies.

RF / ELECTRICAL

PARAMETER	MIN	TYP.	MAX	UNIT
Operating Frequency	9		10	GHz
Operating Mode		Pulsed
RF INPUT	-2	0	2	dBm
Power Gain		68		dB
P-sat Output Power	68	68		dBm
Power Gain Flatness		±2		dB
Pulse width	0.26		30	us
Repeat Rate			10	kHz
Duty cycle			5	%
Operating Voltage		220		V AC
Supply Power		2000	3000	W
Continuous operating time in full power (6kW)	15			minute
RF output reverse power Samples (coupler)			-60	dB
RF output forward power Sample (coupler)			-60	dB
RF Output Pulse Video Sample			10 mv/kw into 50Ω
Modulation Input imedance		50		Ω
Monitor		LCD, LED, ethernet
Control mode		Local (button)/Remote (ethernet)
Input modulation pulse level		5V（TTL）
Throughput delay(from input RF/modulation pulse to output video, 50% point)		<500ns< /td>
Spurious phase noise		<40dBc< /td>
Operating VSWR		<1.5:1< /td>

Product Description

High-power microwave amplifier 9-10GHz 6KW Traveling WaveTube RF power amplifier

The 9-10GHz 6kW TWT RF Power Amplifier is a high-power microwave amplifier designed for applications requiring significant power output in the 9-10GHz frequency band. This device employs Traveling Wave Tube (TWT) technology as the core amplification method, ensuring high gain, wide bandwidth, and stable output for a variety of high-frequency applications.

Key Features

• Frequency Range: 9GHz - 10GHz
• Output Power: 6kW (Peak Power)
• Amplification Technology: Traveling Wave Tube (TWT)
• Gain: High gain with linear amplification capability
• Cooling System: Integrated air or liquid cooling to maintain stable performance
• Power Supply: Customizable input power configurations
• Efficiency: High-efficiency power conversion
• Waveguide Interface: Standard waveguide output for seamless integration
• Control System: Built-in monitoring and protection circuits for reliability

Performance Highlights

1. High Power Output: Capable of delivering peak power up to 6kW, suitable for long-range and high-intensity signal transmission.
2. Wide Bandwidth: Covers the 9GHz-10GHz frequency range, ensuring stable operation across the entire spectrum.
3. Stable and Reliable: Advanced thermal management systems support continuous operation in demanding and harsh environments.
4. Precision Amplification: High linear gain ensures minimal signal distortion, ideal for applications requiring signal fidelity.
5. Robust Design: Durable construction with built-in protection circuits to safeguard the device against overvoltage, overheating, and load mismatches.

Applications

• Radar Systems: High-power amplification for long-range radar systems in defense and aviation.
• Electronic Warfare (EW): Signal jamming, electronic countermeasures, and defense-based communication systems.
• Satellite Communication: Amplification for ground-based and airborne satellite transmitters.
• Scientific Research: Used in high-frequency experiments, particle accelerators, and microwave plasma generation.
• Medical Industry: Applications in oncology for radiation therapy systems, microwave ablation, and precision thermal therapies, providing efficient energy delivery for targeted treatments.
• Test and Measurement: Provides a stable high-power RF source for system testing, calibration, and high-frequency equipment validation.

Summary

The 9-10GHz 6kW TWT RF Power Amplifier is a reliable and high-performance solution for applications requiring significant RF power in the 9-10GHz range. Its advanced TWT technology, high efficiency, and robust design make it ideal for radar systems, satellite communication, electronic warfare, scientific research, and medical applications such as microwave-based cancer treatments and precision thermal therapies.

RF / ELECTRICAL

PARAMETER	MIN	TYP.	MAX	UNIT
Operating Frequency	9		10	GHz
Operating Mode		Pulsed
RF INPUT	-2	0	2	dBm
Power Gain		68		dB
P-sat Output Power	68	68		dBm
Power Gain Flatness		±2		dB
Pulse width	0.26		30	us
Repeat Rate			10	kHz
Duty cycle			5	%
Operating Voltage		220		V AC
Supply Power		2000	3000	W
Continuous operating time in full power (6kW)	15			minute
RF output reverse power Samples (coupler)			-60	dB
RF output forward power Sample (coupler)			-60	dB
RF Output Pulse Video Sample			10 mv/kw into 50Ω
Modulation Input imedance		50		Ω
Monitor		LCD, LED, ethernet
Control mode		Local (button)/Remote (ethernet)
Input modulation pulse level		5V（TTL）
Throughput delay(from input RF/modulation pulse to output video, 50% point)		<500ns< /td>
Spurious phase noise		<40dBc< /td>
Operating VSWR		<1.5:1< /td>